Semiconductor Constant Depth Scans

Built-In Voltage Barrier Scan

Built-in voltage sets the remaining forward barrier. Exact arithmetic here means exact results for the stated model inputs; measured inputs still carry uncertainty and significant-figure limits.

highlighted = computed this step

Lower built-in voltage leaves a smaller barrier

The forward applied voltage stays at 1 volt. Built-in voltage 2 V leaves effective voltage 1 V and barrier energy 2 joules.

Veff=2−1=1 VE=qV=2⋅1=2 J\begin{array}{c}V_{\mathrm{eff}}=2 - 1=1\ \mathrm{V}\\E=qV=2\cdot 1=2\ \mathrm{J}\end{array}
Built-in row 2 VThe built-in voltage, not the applied row, is swept.q=2 CV_bi=2 VV_app=1 Vpolarity=forwardV_eff=1 VE_barrier=2 J

Default built-in voltage leaves the middle barrier

The forward applied voltage stays at 1 volt. Built-in voltage 3 V leaves effective voltage 2 V and barrier energy 4 joules.

Veff=3−1=2 VE=qV=2⋅2=4 J\begin{array}{c}V_{\mathrm{eff}}=3 - 1=2\ \mathrm{V}\\E=qV=2\cdot 2=4\ \mathrm{J}\end{array}
Built-in row 3 VThe built-in voltage, not the applied row, is swept.q=2 CV_bi=3 VV_app=1 Vpolarity=forwardV_eff=2 VE_barrier=4 J

Higher built-in voltage leaves a larger barrier

The forward applied voltage stays at 1 volt. Built-in voltage 4 V leaves effective voltage 3 V and barrier energy 6 joules.

Veff=4−1=3 VE=qV=2⋅3=6 J\begin{array}{c}V_{\mathrm{eff}}=4 - 1=3\ \mathrm{V}\\E=qV=2\cdot 3=6\ \mathrm{J}\end{array}
Built-in row 4 VThe built-in voltage, not the applied row, is swept.q=2 CV_bi=4 VV_app=1 Vpolarity=forwardV_eff=3 VE_barrier=6 J